Characterization of L21 order in Co2FeSi thin films on GaAs

被引：2

作者：

Jenichen, B. ^{[1
]}

Hentschel, T. ^{[1
]}

Herfort, J. ^{[1
]}

Kong, X. ^{[1
]}

Trampert, A. ^{[1
]}

Zizak, I.

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

18TH MICROSCOPY OF SEMICONDUCTING MATERIALS CONFERENCE (MSM XVIII) | 2013年 / 471卷

关键词：

D O I：

10.1088/1742-6596/471/1/012022

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Co2FeSi/GaAs(110) and Co2FeSi/GaAs(-1-1-1)B hybrid structures were grown by molecular-beam epitaxy (MBE) and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The films contain inhomogeneous distributions of ordered L2(1) and B2 phases. The average stoichiometry could be determined by XRD for calibration of the MBE sources. Diffusion processes lead to inhomogeneities, influencing long-range order. An average L2(1) ordering of up to 65% was measured by grazing-incidence XRD. Lateral inhomogeneities of the spatial distribution of long-range order in C(o)2FeSi were imaged using dark-field TEM with superlattice reflections and shown to correspond to variations of the Co/Fe ratio.

引用

页数：4

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