Solar cells prepared on multicrystalline silicon subjected to new gettering and passivation treatments

被引：5

作者：

Litovchenko, VG

Klyuis, NI

Evtukh, AA

Efremov, AA

Sarikov, AV

Popov, VG

Kostylyov, VP

Rasamakin, YV

Haessler, C

Koch, W

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Bayer AG, Cent Res Phys, D-47812 Krefeld, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 72卷 / 1-4期

关键词：

Al layer; plasma treatments; developed surface; gettering; multicrystalline silicon; diamond-like films;

D O I：

10.1016/S0927-0248(01)00182-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

New combined gettering and passivating procedures for solar cells prepared from multicrystalline silicon (mc-Si) have been considered. Passivation has been performed by (i) diamond-like carbon films deposition onto front or rear side of the wafers with following annealing, or (ii) hydrogen plasma treatments. Gettering region has been formed by deposition of Al film on specially prepared Si with developed surface. The advantages of such a gettering process in comparison with traditional gettering with Al are demonstrated. The improving influence of the treatments on diffusion length in me-Si and efficiency of prepared solar cells have been found out. Physical mechanisms responsible for the observed effects of gettering and passivation are discussed. (C) 2002 Published by Elsevier Science B.V.

引用

页码：343 / 351

页数：9

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