Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films

被引：268

作者：

Jun, Min-Chul ^{[1
]}

Park, Sang-Uk ^{[1
]}

Koh, Jung-Hyuk ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

来源：

NANOSCALE RESEARCH LETTERS | 2012年 / 7卷

关键词：

AZO; GZO; Transparent conducting oxide; Thin films; Spin-coating; CHEMICAL-VAPOR-DEPOSITION; OPTICAL-PROPERTIES; ZINC; PLASMA; RF; TEMPERATURE; SILICON;

D O I：

10.1186/1556-276X-7-639

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have investigated the influences of aluminum and gallium dopants (0 to 2.0 mol%) on zinc oxide (ZnO) thin films regarding crystallization and electrical and optical properties for application in transparent conducting oxide devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates (corning 1737) by sol-gel spin-coating process. As a starting material, AlCl(3)a <...6H(2)O, Ga(NO3)(2), and Zn(CH3COO)(2)a <...2H(2)O were used. A lowest sheet resistance of 3.3 x 10(3) a"broken vertical bar/a- was obtained for the GZO thin film doped with 1.5 mol% of Ga after post-annealing at 650A degrees C for 60 min in air. All the films showed more than 85% transparency in the visible region. We have studied the structural and microstructural properties as a function of Al and Ga concentrations through X-ray diffraction and scanning electron microscopy analysis. In addition, the optical bandgap and photoluminescence were estimated.

引用

页数：6

共 32 条

[1] Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique [J].

Al Asmar, R ;

Juillaguet, S ;

Ramonda, M ;

Giani, A ;

Combette, P ;

Khoury, A ;

Foucaran, A .

JOURNAL OF CRYSTAL GROWTH, 2005, 275 (3-4) :512-520

[2] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040

[3] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[4] Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties [J].

Cebulla, R ;

Wendt, R ;

Ellmer, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :1087-1095

[5] ZAO: an attractive potential substitute for ITO in flat display panels [J].

Chen, M ;

Pei, ZL ;

Sun, C ;

Gong, J ;

Huang, RF ;

Wen, LS .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 85 (2-3) :212-217

[6] Electrical and optical studies of ZnO:Ga thin films fabricated via the sol-gel technique [J].

Cheong, KY ;

Muti, N ;

Ramanan, SR .

THIN SOLID FILMS, 2002, 410 (1-2) :142-146

[7] Large area ZnO films optimized for graded band-gap Cu(InGa)Se-2-based thin-film mini-modules [J].

Cooray, NF ;

Kushiya, K ;

Fujimaki, A ;

Sugiyama, I ;

Miura, T ;

Okumura, D ;

Sato, M ;

Ooshita, M ;

Yamase, O .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :291-297

[8]

Fang GJ, 2002, PHYS STATUS SOLIDI A, V193, P139, DOI 10.1002/1521-396X(200209)193:1<139::AID-PSSA139>3.0.CO

[9]

2-D

[10] Photoluminescence and structure of ZnO films deposited on Si substrates by metal-organic chemical vapor deposition [J].

Fu, ZX ;

Lin, BX ;

Zu, J .

THIN SOLID FILMS, 2002, 402 (1-2) :302-306

← 1 2 3 4 →