Intense white luminescence in ZnTe embedded porous silicon

被引：1
作者：
de Melo, O. [1 ]
de Melo, C. [1 ]
Santana, G. [2 ]
Santoyo, J. [3 ]
Zelaya-Angel, O. [3 ]
Mendoza-Alvarez, J. G. [3 ]
Torres-Costa, V. [4 ]
机构：
[1] Univ Havana, Fac Phys, Havana, Cuba
[2] Univ Nacl Autonoma Mexico, Inst Invest Mat, Coyoacan 04510, Mexico
[3] IPN, CINVESTAV, Dept Phys, Mexico City, DF, Mexico
[4] Univ Autonoma Madrid, Dept Fis Aplicada, E-28049 Madrid, Spain
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 26期
关键词：
QUANTUM DOTS; PHOTOLUMINESCENCE; GROWTH; FILMS; LAYER;
D O I：
10.1063/1.4731276
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Porous silicon layers were embedded with ZnTe using the isothermal close space sublimation technique. The presence of ZnTe was demonstrated using cross-sectional energy dispersive spectroscopy maps. ZnTe embedded samples present intense room temperature photoluminescence along the whole visible range. We ascribe this PL to ZnTe nanocrystals of different sizes grown on the internal pore surface. Such crystals, with different orientations and sizes, were observed in transmission electron microscopy images, while transmission electron diffraction images of the same regions reveal ZnTe characteristic patterns. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731276]
引用
收藏
页数：3
相关论文
共 16 条
  • [1] Electrochemical deposition of cerium on porous silicon to improve photoluminescence properties
    Atyaoui, Malek
    Dimassi, Wissem
    Monther, Ghrib
    Chtourou, Radhouane
    Ezzaouia, Hatem
    [J]. JOURNAL OF LUMINESCENCE, 2012, 132 (02) : 277 - 281
  • [2] ZnTe/ZnSe (Core/Shell) Type-II Quantum Dots: Their Optical and Photovoltaic Properties
    Bang, Jiwon
    Park, Juwon
    Lee, Ji Hwang
    Won, Nayoun
    Nam, Jutaek
    Lim, Jongwoo
    Chang, Byoung Yong
    Lee, Hyo Joong
    Chon, Bonghwan
    Shin, Junghan
    Park, Jae Byung
    Choi, Jong Hwa
    Cho, Kilwon
    Park, Su Moon
    Joo, Taiha
    Kim, Sungjee
    [J]. CHEMISTRY OF MATERIALS, 2010, 22 (01) : 233 - 240
  • [3] Porous silicon: a quantum sponge structure for silicon based optoelectronics
    Bisi, O
    Ossicini, S
    Pavesi, L
    [J]. SURFACE SCIENCE REPORTS, 2000, 38 (1-3) : 1 - 126
  • [4] From Si nanowires to porous silicon: The role of excitonic effects
    Bruno, Mauro
    Palummo, Maurizia
    Marini, Andrea
    Del Sole, Rodolfo
    Ossicini, Stefano
    [J]. PHYSICAL REVIEW LETTERS, 2007, 98 (03)
  • [5] Structure and growth rate of ZnTe films grown by isothermal closed space sublimation
    de Melo, O.
    Larramendi, E. M.
    Duart, J. M. Martinez
    Velez, M. Hernandez
    Stangl, J.
    Sitter, H.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 307 (02) : 253 - 258
  • [6] Visible-Color-Tunable Light-Emitting Diodes
    Hong, Young Joon
    Lee, Chul-Ho
    Yoon, Aram
    Kim, Miyoung
    Seong, Han-Kyu
    Chung, Hun Jae
    Sone, Cheolsoo
    Park, Yong Jo
    Yi, Gyu-Chul
    [J]. ADVANCED MATERIALS, 2011, 23 (29) : 3284 - +
  • [7] Growth and photoluminescence study of ZnTe quantum dots
    Liao, MCH
    Change, YH
    Tsai, CC
    Chieng, MH
    Chen, YF
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4694 - 4696
  • [8] Oxide-free blue photoluminescence from photochemically etched porous silicon
    Mizuno, H
    Koyama, H
    Koshida, N
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (25) : 3779 - 3781
  • [9] Nanocrystalline ZnO film grown on porous silicon layer by radio frequency sputtering system
    Salman, Khaldun A.
    Omar, Khalid
    Hassan, Z.
    [J]. MATERIALS LETTERS, 2012, 68 : 51 - 53
  • [10] White light emission from chemically synthesized ZnO-porous silicon nanocomposite
    Singh, R. G.
    Singh, Fouran
    Kanjilal, D.
    Agarwal, V.
    Mehra, R. M.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (06)
12