Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

被引：0
作者：
Gallstrom, A. [1 ]
Magnusson, B. [2 ]
Beyer, F. C. [1 ]
Gali, A. [3 ,4 ]
Son, N. T. [1 ]
Leone, S. [1 ]
Lyanov, I. G. [1 ]
Henry, A. [1 ]
Hemmingsson, C. G. [1 ]
Janzen, E. [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
[2] Norstel AB, S-60238 Norrkoping, Sweden
[3] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary
[4] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
deep level defect; PL; transition metal; Crystal Field Model; SILICON-CARBIDE; VANADIUM;
D O I：
10.4028/www.scientific.net/MSF.717-720.211
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.
引用
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页码：211 / +
页数：2
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