Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

被引：0
作者：
Gallstrom, A. [1 ]
Magnusson, B. [2 ]
Beyer, F. C. [1 ]
Gali, A. [3 ,4 ]
Son, N. T. [1 ]
Leone, S. [1 ]
Lyanov, I. G. [1 ]
Henry, A. [1 ]
Hemmingsson, C. G. [1 ]
Janzen, E. [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
[2] Norstel AB, S-60238 Norrkoping, Sweden
[3] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary
[4] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
deep level defect; PL; transition metal; Crystal Field Model; SILICON-CARBIDE; VANADIUM;
D O I：
10.4028/www.scientific.net/MSF.717-720.211
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.
引用
收藏
页码：211 / +
页数：2
相关论文
共 50 条
  • [21] Impact ionization of nitrogen in 4H-and 6H-SiC
    Sankin, V. I.
    Petrov, A. G.
    Kaliteevski, M.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (06)
  • [22] Dual configuration of shallow acceptor levels in 4H-SiC
    Bathen, Marianne Etzelmueller
    Kumar, Piyush
    Ghezellou, Misagh
    Belanche, Manuel
    Vines, Lasse
    Ul-Hassan, Jawad
    Grossner, Ulrike
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 177
  • [23] Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations
    Tian, Zige
    Xu, Xipeng
    Jiang, Feng
    Lu, Jing
    Luo, Qiufa
    Lin, Jiaming
    CERAMICS INTERNATIONAL, 2019, 45 (17) : 21998 - 22006
  • [24] Excimer laser ablation of single crystal 4H-SiC and 6H-SiC wafers
    Gupta, Saurabh
    Pecholt, Ben
    Molian, Pal
    JOURNAL OF MATERIALS SCIENCE, 2011, 46 (01) : 196 - 206
  • [25] Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range
    Guo, Xiao
    Peng, Zeyu
    Ding, Pengbo
    Li, Long
    Chen, Xinyi
    Wei, Haoyun
    Tong, Zhen
    Guo, Liang
    OPTICAL MATERIALS EXPRESS, 2021, 11 (04) : 1080 - 1092
  • [26] Temperature dependence of refractive indices for 4H-and 6H-SiC
    Xu, Chunhua
    Wang, Shunchong
    Wang, Gang
    Liang, Jingkui
    Wang, Shanpeng
    Bai, Lei
    Yang, Junwei
    Chen, Xiaolong
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (11)
  • [27] The effect of thermal annealing in a hydrogen atmosphere on tungsten deposited on 6H-SiC
    Thabethe, T. T.
    Hlatshwayo, T. T.
    Njoroge, E. G.
    Nyawo, T. G.
    Malherbe, J. B.
    VACUUM, 2016, 129 : 161 - 165
  • [28] Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals
    Gupta, Avinash
    Wu, Ping
    Rengarajan, Varatharajan
    Xu, Xueping
    Yoganathan, Murugesu
    Martin, Chris
    Emorhokpor, Ejiro
    Souzis, Andy
    Zwieback, Ilya
    Anderson, Tom
    B - SILICON CARBIDE 2010-MATERIALS, PROCESSING AND DEVICES, 2010, 1246
  • [29] Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C
    Ghosh, Ruby N.
    Loloee, Reza
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1187 - 1189
  • [30] Structural analyses for SiC and AlGaN grown on off-axis 4H-and 6H-SiC
    Jones, K. A.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (10) : 2417 - 2426
12345