Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

被引：0

作者：

Gallstrom, A. ^{[1
]}

Magnusson, B. ^{[2
]}

Beyer, F. C. ^{[1
]}

Gali, A. ^{[3
,4
]}

Son, N. T. ^{[1
]}

Leone, S. ^{[1
]}

Lyanov, I. G. ^{[1
]}

Henry, A. ^{[1
]}

Hemmingsson, C. G. ^{[1
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Norstel AB, S-60238 Norrkoping, Sweden

[3] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

[4] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

deep level defect; PL; transition metal; Crystal Field Model; SILICON-CARBIDE; VANADIUM;

D O I：

10.4028/www.scientific.net/MSF.717-720.211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A commonly observed unidentified photoluminescence center in SiC is UD-1. In this report, the UD-1 center is identified to be tungsten related. The identification is based on (i) a W-doping study, the confirmation of W in the samples was made using deep level transient spectroscopy (DLTS), (ii) the optical activation energy of the absorption of UD-1 in weakly n-type samples corresponds to the activation energy of the deep tungsten center observed using DLTS. The tungsten-related optical centers are reported in 4H-, 6H-, and 15R-SiC. Further, a crystal field model for a tungsten atom occupying a Si-site is suggested. This crystal field model is in agreement with the experimental data available: polarization, temperature dependence and magnetic field splitting.

引用

页码：211 / +

页数：2

共 50 条

[11] Lattice location studies of rare earth impurities in 3C-, 4H- and 6H-SiC
Vetter, U
Hofsäss, H
Wahl, U
Dietrich, M
DIAMOND AND RELATED MATERIALS, 2003, 12 (10-11) : 1883 - 1886
[12] Characterisation of defects in p-type 4H-, 6H-and 3C-SiC epilayers grown on SiC substrates
Kato, Masashi
Ichikawa, Naoto
Nakano, Yoshitaka
MATERIALS LETTERS, 2019, 254 (96-98) : 96 - 98
[13] Electrical and optical characterisation of vanadium in 4H and 6H-SiC
Lauer, V
Brémond, G
Souifi, A
Guillot, G
Chourou, K
Anikin, M
Madar, R
Clerjaud, B
Naud, C
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 248 - 252
[14] PHONONS IN 3C-SIC, 4H-SIC, AND 6H-SIC
NIENHAUS, H
KAMPEN, TU
MONCH, W
SURFACE SCIENCE, 1995, 324 (01) : L328 - L332
[15] 6H-]3C-SIC TRANSFORMATION IN SIC-TIN POWDER MIXTURE AT HIGH-TEMPERATURE
TANAKA, H
TAKEKAWA, S
TSUTSUMI, M
NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1991, 99 (05): : 376 - 379
[16] Nitrogen implantation in 4H and 6H-SiC
Gimbert, J
Billon, T
Ouisse, T
Grisolia, J
Ben-Assayag, G
Jaussaud, C
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 368 - 372
[17] Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide
M. A. Capano
S. Ryu
M. R. Melloch
J. A. Cooper
M. R. Buss
Journal of Electronic Materials, 1998, 27 : 370 - 376
[18] Microhardness of 6H-and 4H-SiC Substrates
Eddy, C. R., Jr.
Wu, P.
Zwieback, I.
VanMil, B. L.
Myers-Ward, R. L.
Tedesco, J. L.
Souzis, A. E.
Gaskill, D. K.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 323 - 326
[19] The acceptor level for vanadium in 4H and 6H SiC
Zvanut, ME
Lee, W
Mitchel, WC
Mitchell, WD
Landis, G
PHYSICA B-CONDENSED MATTER, 2006, 376 : 346 - 349
[20] Diffusion of light elements in 4H-and 6H-SiC
Linnarsson, MK
Janson, MS
Karlsson, S
Schöner, A
Nordell, N
Svensson, BG
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 275 - 280

← 1 2 3 4 5 →