A 245 GHz LNA in SiGe Technology

被引：33

作者：

Schmalz, Klaus ^{[1
]}

Borngraeber, Johannes ^{[1
]}

Mao, Yanfei ^{[1
]}

Ruecker, Holger ^{[1
]}

Weber, Rainer ^{[2
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

[2] Fraunhofer IAF, D-79108 Freiburg, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 10期

关键词：

Low noise amplifier (LNA); mm-wave circuit; SiGe;

D O I：

10.1109/LMWC.2012.2218097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A five-stage differential SiGe low noise amplifier (LNA) in cascode topology is presented. Transformer coupling is used between the stages to obtain inter-stage matching. The single ended input and output of the LNA are realized by baluns. The LNA has 18 dB of gain at 245 GHz and a 3 dB bandwidth of 8 GHz. A noise figure of 11 +/- 1 dB NF of the LNA at 245 GHz was measured by the Y-factor method. These values represent the highest gain and the lowest measured noise figure at 245 GHz reported for a SiGe LNA so far. The LNA draws 82 mA at a supply voltage of 3.7 V.

引用

页码：533 / 535

页数：3