A 245 GHz LNA in SiGe Technology

被引：33
作者：
Schmalz, Klaus [1 ]
Borngraeber, Johannes [1 ]
Mao, Yanfei [1 ]
Ruecker, Holger [1 ]
Weber, Rainer [2 ]
机构：
[1] IHP, D-15236 Frankfurt, Germany
[2] Fraunhofer IAF, D-79108 Freiburg, Germany
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 10期
关键词：
Low noise amplifier (LNA); mm-wave circuit; SiGe;
D O I：
10.1109/LMWC.2012.2218097
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A five-stage differential SiGe low noise amplifier (LNA) in cascode topology is presented. Transformer coupling is used between the stages to obtain inter-stage matching. The single ended input and output of the LNA are realized by baluns. The LNA has 18 dB of gain at 245 GHz and a 3 dB bandwidth of 8 GHz. A noise figure of 11 +/- 1 dB NF of the LNA at 245 GHz was measured by the Y-factor method. These values represent the highest gain and the lowest measured noise figure at 245 GHz reported for a SiGe LNA so far. The LNA draws 82 mA at a supply voltage of 3.7 V.
引用
收藏
页码：533 / 535
页数：3
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