Transparent conducting indium molybdenum oxide films by pulsed laser ablation

被引：5

作者：

Beena, D. ^{[1
]}

Vinodkumar, R. ^{[1
]}

Navas, I. ^{[1
]}

Ganesan, V. ^{[2
]}

Yamuna, A. ^{[1
]}

Pillai, V. P. Mahadevan ^{[1
]}

机构：

[1] Univ Kerala, Dept Optoelect, Thiruvananthapuram 695581, Kerala, India

[2] UGC DAE CSR, Indore 452017, Madhya Pradesh, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 539卷

关键词：

Transparent conducting oxides; Indium oxide thin films; Molybdenum oxide; Nanostructured films; XRD analysis; Pulsed laser ablation; THIN-FILMS; SOL-GEL; HIGH-MOBILITY; BAND-GAP; TCO;

D O I：

10.1016/j.jallcom.2012.05.118

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Highly transparent and conducting molybdenum oxide (2, 3, 4 wt%) doped indium oxide thin films are prepared using pulsed laser ablation. XRD and AFM analysis show that at higher MoO3 doping concentration (>3 wt%) inhibits grain growth due to the presence of Mo atoms at grain boundaries. The average size of the crystallites increases with MoO3 doping up to 3% and thereafter decreases. The doped films exhibited high values of optical transmittance and low values of electrical resistivity compared to undoped films. Beyond 3 wt% MoO3 doping, the optical and electrical properties slightly decline. The observed band gap widening in the films can be attributed to Moss-Burstein effect. All the films show intense PL emission in the UV-visible region. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：63 / 68

页数：6

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