Conduction-type control of SnSx films prepared by the sol-gel method for different sulfur contents

被引：49
|
作者：
Huang, Chung-Cheng [1 ]
Lin, Yow-Jon [1 ]
Chuang, Cheng-Yu [2 ]
Liu, Chia-Jyi [2 ]
Yang, Yao-Wei [1 ]
机构：
[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan
[2] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2013年 / 553卷
关键词：
Electronic structures; Semiconductors; Chemical synthesis; SnS; SULFIDE THIN-FILMS; OPTICAL-PROPERTIES; DEPOSITION;
D O I：
10.1016/j.jallcom.2012.11.134
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect of S content on the electrical property of the sol-gel SnSx films was examined. The observed conduction-type changes are related to the different ratios between the concentrations of Sn4+ and Sn2+. The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn4+/(Sn4+ + Sn2+) in the S-rich film. The probability of having formed Sn vacancies (V-Sn) should be high under S-rich growth conditions. Transformation from V-Sn to V-Sn(2) is accompanied by lattice relaxation. Therefore, transformation from Sn2+ to Sn4+ is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnSx. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码：208 / 211
页数：4
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