Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy

被引：3

作者：

Titus, J. ^{[1
]}

Nguyen, H. P. T. ^{[2
]}

Mi, Z. ^{[2
]}

Perera, A. G. U. ^{[1
]}

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 12期

基金：

美国国家科学基金会;

关键词：

PHOTOLUMINESCENCE;

D O I：

10.1063/1.4798245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the studies of optical phonon modes in nearly defect-free GaN nanowires embedded with intrinsic InGaN quantum dots by using oblique angle transmission infrared spectroscopy. These phonon modes are dependent on the nanowire fill-factor, doping densities of the nanowires, and the presence of InGaN dots. These factors can be applied for potential phonon based photodetectors whose spectral responses can be tailored by varying a combination of these three parameters. The optical anisotropy along the growth (c-) axis of the GaN nanowire contributes to the polarization agility of such potential photodetectors. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798245]

引用

页数：3

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