Exciton binding energy in an infinite potential semiconductor quantum well-wire heterostructure

被引:8
作者
Harris, Richard [1 ]
Terblans, Jacobus [1 ]
Swart, Hendrik [1 ]
机构
[1] Univ Orange Free State, Dept Phys, ZA-9301 Bloemfontein, Free State, South Africa
关键词
Quantum well; Quantum wire; Confinement; GaAs/AlGaAs; Semiconductor; Heterostructure; Exciton; HYDROGENIC DONOR IMPURITY; REFRACTIVE-INDEX CHANGES; LIGHT-EMITTING-DIODES; OPTICAL-ABSORPTION; EFFICIENCY;
D O I
10.1016/j.spmi.2015.08.010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An interacting electron-hole pair in a quantum well-wire is studied within the framework of the effective-mass approximation. An expansion to a I dimensional, quantum well model is presented to include another confinement dimension for a quasi-2 dimensional, quasi-1 dimensional quantum well-wire heterostructure. The technique is applied to an infinite well-wire confining potential. The envelope function approximation is employed in the approach, involving a three parameter variational calculation in which the symmetry of the component of the wave function representing the relative motion is allowed to vary from the one- to the two- and three-dimensional limits. Results to such a numerical calculation are presented. Quantitative comparisons with previous calculations for quantum wells is made (in the wire limit where Lz -> infinity) to find a good agreement between finite and infinite potential models up to a size of 100 angstrom. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:456 / 466
页数:11
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