Photodetectors with an HIT structure on p-type crystalline Si wafers

被引：7

作者：

Lin, C. -H. ^{[1
]}

Tsai, T. -H. ^{[1
]}

Wang, C. -M. ^{[1
]}

Yeh, W. -T. ^{[1
]}

机构：

[1] Natl Dong Hwa Univ, Dept Optoelect Engn, Shoufeng, Hualien, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2013年 / 275卷

关键词：

HIT; Solar cells; Photodetectors; HETEROJUNCTION; CELLS;

D O I：

10.1016/j.apsusc.2012.12.113

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the visible/near-infrared photodetectors based on the nipip HIT structure. The responsivities of the nipip photodetectors were compared with the pinin photodetectors. The nipip structure has a better near-infrared response; meanwhile the pinin structure has a better blue response. At 1 V, the responsivities of the typical nipip HIT structure could achieve 0.478, 0.530, and 0.667 A/W at the wavelengths of 450, 650, and 850 nm, respectively. The thicker top a-Si:H(i) would not prevent the hole collection for the nipip structures. If the thickness of top a-Si:H(i) can be appropriately increased, the responsivities would be further enhanced. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：269 / 272

页数：4

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