Design of high-Q varactors for low-power wireless applications using a standard CMOS process

被引：5

作者：

Porret, AS ^{[1
]}

Melly, T ^{[1
]}

Enz, CC ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Elect Lab, CH-1015 Lausanne, Switzerland

来源：

PROCEEDINGS OF THE IEEE 1999 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 1999年

关键词：

D O I：

10.1109/CICC.1999.777362

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The power consumption of an LC-tank oscillator is strongly affected by the varactor quality factor, whether the inductor is on- or off-chip. This paper proposes a new solution to realize high-Q, highly tunable on-chip varactors in a standard CMOS process, achieving a quality factor higher than 100 at 1 GHz, for a tuning ratio of 2. Other solutions are described and their respective advantages compared, while their characteristics are measured for a 0.5 mu m process.

引用

页码：641 / 644

页数：4

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