Effect of TiOx/TiO2 layer thickness on the properties of the pulsed laser deposited memristive device

被引：3
作者：
Tselikov, G. I. [1 ]
Emelyanov, A. V. [1 ]
Antropov, I. M. [1 ]
Demin, V. A. [1 ]
Kashkarov, P. K. [1 ,2 ,3 ]
机构：
[1] Natl Res Ctr Kurchatov Inst, Moscow 123182, Russia
[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
[3] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 1-2 | 2015年 / 12卷 / 1-2期
关键词：
memristor; resistive switching; pulsed laser deposition; TiO2; Auger spectroscopy; HYSTERESIS; TIO2;
D O I：
10.1002/pssc.201400123
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Memristive properties of the pulsed laser deposited Pt/TiOx/TiO2/Pt heterostructures with different layer thicknesses are studied. It was found that the memristor device provides nonmonotonic dependence of the ratio of its resistance in low and high conductive states R-off/R-on on layers thickness. The maximum value of the ratio R-off/R-on = 200 is obtained when the thickness of both TiOx and TiO2 layers is 30 nm. The dependence of the stoichiometry index of deposited layers from their thicknesses is studied by means of Auger spectroscopy measurements. The nonmonotonic behaviour of the ratio R-off/R-on on layer thickness is discussed in terms of wide stoichiometry distribution through the amorphous TiOx/TiO2 structure. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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收藏
页码：229 / 232
页数：4
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