Hybrid III-V/Si Distributed-Feedback Laser Based on Adhesive Bonding

被引：73

作者：

Stankovic, Stevan ^{[1
]}

Jones, Richard ^{[2
]}

Sysak, Matthew N. ^{[2
]}

Heck, John M. ^{[2
]}

Roelkens, Gunther ^{[1
]}

Van Thourhout, Dries ^{[1
]}

机构：

[1] Univ Ghent, IMEC, INTEC Dept, Photon Res Grp, B-9000 Ghent, Belgium

[2] Intel Corp, Santa Clara, CA 95054 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 23期

关键词：

Distributed-feedback lasers; evanescent coupling; heterogeneous integration; silicon photonics; SILICON EVANESCENT LASER;

D O I：

10.1109/LPT.2012.2223666

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A hybrid evanescently coupled III-V/silicon distributed-feedback laser with an integrated monitor photodiode, based on adhesive divinyl siloxane-benzocyclobutene bonding and emitting at 1310 nm, is presented. An output power of similar to 2.85 mW is obtained in a continuous wave regime at 10 degrees C. The threshold current is 20 mA and a sidemode suppression ratio of 45 dB is demonstrated. Optical feedback is provided via corrugations on top of the silicon rib waveguide, while a specially developed bonding procedure yields 40-nm-thick adhesive bonding layers, enabling efficient evanescent coupling.

引用

页码：2155 / 2158

页数：4

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