Study of ion-induced secondary photon emission in reactive ion etching experiment

被引：0
作者：
Moshkalyov, SA
Machida, M
Campos, DO
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 7B期
关键词：
reactive ion etching; optical emission spectroscopy; sputtering; excited atoms and molecules; plasma-surface interaction;
D O I：
10.1143/JJAP.36.4675
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical emission spectroscopy with high spatial resolution was employed for the study of surface sputtering under reactive ion etching conditions in chlorine-containing gas mixtures. Secondary photon emission (both atomic and molecular) from the processed material was found to be strongly localized near the surface. A simple model, considering the observed features of the secondary photon emission as induced by ion sputtering of the processed surface, has been presented. This technique can give new opportunities for in-situ, diagnostics and modeling of plasma-surface interaction in various plasma technologies.
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页码：4675 / 4681
页数：7
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