Surface processing of silicon carbide substrates

被引：1

作者：

Bakin, AS

Dorozhkin, SI

Bogachov, SV

KazakKazakevich, AZ

Lyutetskaja, IG

Sazanov, AP

机构：

[1] St. Petersburg Electrotechnical U., 197376, St.Petersburg

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 46卷 / 1-3期

关键词：

surface processing; silicon carbide; epitaxial growth;

D O I：

10.1016/S0921-5107(96)02008-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide application as substrate material for epitaxial growth and for device fabrication strongly depends on the possibilities of surface processing. The aim of the present paper is to study the influence of the different types of surface processing and their consequence on the silicon carbide surface morphology and removal of the mechanically damaged near-surface layer. (C) 1997 Elsevier Science S.A.

引用

页码：370 / 373

页数：4