Data retention characteristics of nitride-based charge trap memory devices with high-k dielectrics and high-work-function metal gates for multi-gigabit flash memory

被引：34

作者：

Lee, Jang-Sik ^{[1
]}

Kang, Chang-Seok ^{[1
]}

Shin, Yoo-Cheol ^{[1
]}

Lee, Chanc-Hyun ^{[1
]}

Park, Ki-Tae ^{[1
]}

Sel, Jong-Sun ^{[1
]}

Kim, Viena ^{[1
]}

Choe, Byeong-In ^{[1
]}

Sim, Jae-Suncy ^{[1
]}

Choi, Jungdal ^{[1
]}

Kim, Kinam ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Technol Dev Team, Semicond R&D Ctr, Memory Business, Yongin 449711, Kyungki, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4B期

关键词：

SONOS/MONOS; flash memory; high-k dielectrics; high-work-function metal gate; charge trap layer;

D O I：

10.1143/JJAP.45.3213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The data retention characteristics of nitride-based charge trap memories using metal-oxide-nitride-oxide-silicon (MONOS) structures employing high-k dielectrics and high-work-function metal gates have been investigated. The fabricated MONOS devices with structures of TaN/Al2O3/Si3N4/SiO2/p-Si show fast program/erase characteristics with a large memory window of greater than 6 V at program and erase voltages of +/- 18 V. From a bake retention test at high temperatures (200, 225, 250, and 275 degrees C), it is expected to take more than 40 years to lose less than 0.5 V charge loss at 85 degrees C. In this paper, we present an optimized cell structure for both improved data retention and erase speed, as well as a systematic study on the charge decay process in MONOS-type flash memory for high-density device applications.

引用

页码：3213 / 3216

页数：4

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