Polysilicon-based flexible temperature sensor for brain monitoring with high spatial resolution

被引：23

作者：

Wu, Zhizhen ^{[1
]}

Li, Chunyan ^{[2
]}

Hartings, Jed ^{[3
]}

Ghosh, Sthitodhi ^{[1
]}

Narayan, Raj ^{[2
]}

Ahn, Chong ^{[1
]}

机构：

[1] Univ Cincinnati, Microsyst & BioMEMS Lab, Cincinnati, OH 45220 USA

[2] Feinstein Inst Med Res, Cushing Neuromonitoring Lab, Manhasset, NY USA

[3] Univ Cincinnati, Dept Neurosurg, Cincinnati, OH USA

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2017年 / 27卷 / 02期

关键词：

polysilicon thin film; flexible temperature microsensor; brain temperature monitoring; NITRIDE; DEEP;

D O I：

10.1088/1361-6439/aa4e99

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature is one of the most important variables in brain monitoring, since changes of focal brain temperature are closely coupled to cerebral physiology and pathophysiological phenomena in injured brain. In this work, a highly accurate temperature sensor with polysilicon thermistors has been developed on flexible polyimide for monitoring brain temperature with high spatial resolution. The temperature sensors have a response time of 1.5 s and sensitivity of -0.0031 degrees C-1. Thermal hysteresis of the sensor in the physiological temperature range of 30-45 degrees C was found to be less than 0.1 degrees C. With silicon nitride as the passivation layer, the temperature sensor exhibits drift of less than 0.3 degrees C for 3 d in water. In vivo tests of the sensor show a low noise level of 0.025 +/- 0.03 degrees C, and the expected transient increases in cortical temperature associated with cortical spreading depolarization. The temperature sensor developed in this work is suitable for monitoring brain temperature with the desired high sensitivity and resolution.

引用

页数：8