GaAs Core-Shell Nanowires for Photovoltaic Applications

被引：401
|
作者：
Czaban, Josef A. [1 ]
Thompson, David A. [1 ]
LaPierre, Ray R. [1 ]
机构：
[1] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada
来源：
NANO LETTERS | 2009年 / 9卷 / 01期
关键词：
MOLECULAR-BEAM EPITAXY; CARRIER MULTIPLICATION; IMPACT IONIZATION; SOLAR-CELLS; GROWTH; EFFICIENCY; ARRAYS;
D O I：
10.1021/nl802700u
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report the use of Te as an n-type dopant in GaAs core-shell p-n junction nanowires for use in photovoltaic devices. Te produced significant change in the morphology of GaAs nanowires grown by the vapor-liquid-solid process in a molecular beam epitaxy system. The increase in radial growth of nanowires due to the surfactant effect of Te had a significant impact on the operating characteristics of photovoltaic devices. A decrease in solar cell efficiency occurred when the Te-doped GaAs growth duration was increased.
引用
收藏
页码：148 / 154
页数：7
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