Hot wall epitaxy of Sb2Te3 layers: coherent hetero-epitaxy on InAs(111) and Sb substitution in Cu-mediated growth

The growth of Sb2Te3 layers by means of hot wall epitaxy is investigated. While the layers grow coherently on InAs(1 1 1) substrates owing to the small lattice mismatch, the appropriate substrate temperature is restricted to a narrow range and the surface preparations play a critical role for the growth due to the rapid re-evaporation of Sb2Te3. We also examine the growth on various substrates having a pre-deposited Cu layer. The Cu layer retains Sb2Te3 at the surface and thus extends the usable substrate-temperature range. During the substitution of the Sb atoms with the Cu atoms, we encounter an incorporation of the group-III elements to the grown layers when III-V compounds are used as the substrates. We additionally present the low-temperature magnetotransport properties in a layer synthesized by the substitution.