Transient Simulation of Lossy Interconnects using the Latency Insertion Method (LIM)

被引：0
|
作者：
Klokotov, Dmitri [1 ]
Schutt-Aine, Jose [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
2008 IEEE-EPEP ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work an extension of the Latency Insertion Method (LIM) formulation to the treatment of networks with frequency-dependent parameters is discussed. It is shown that the algorithm can be transformed to allow, efficient simulation of both skin effect of conductors as well as frequency dependent substrate loss in high speed circuit interconnects.
引用
收藏
页码：233 / 236
页数：4
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