Electrodeposition of CuInTe2 film from an acidic solution

被引：20

作者：

Ishizaki, T ^{[1
]}

Saito, N

Fuwa, A

机构：

[1] Waseda Univ, Sch Sci & Engn, Dept Mat Sci & Engn, Tokyo 1698555, Japan

[2] Nagoya Univ, Grad Sch Engn, Dept Mat Proc Engn, Nagoya, Aichi, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 2004年 / 182卷 / 2-3期

关键词：

electrochemistry; deposition process; copper-indium-telluride;

D O I：

10.1016/j.surfcoat.2003.07.004

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Copper-indium-telluride films were electrochemically deposited from solutions containing CuCl2, InCl3, TeO2 and HCl. Although a flat and smooth film with closely stoichiometric composition was deposited at -660 mV vs. Ag/AgCl at 303 K from a solution of 2.5 X 10(-4) mol dm(-3) CuCl2, 1.0 X 10(-2) mol dm(-3) InCl3, 5.0 X 10(-4) mol dm(-3) TeO2 and 0.1 mol dm(-3) HCl, a polycrystalline CuInTe2 film was not obtained. Increasing the temperature from 303 to 363 K allowed the deposition at lower overpotential of a polycrystalline CuInTe2 film with closely stoichiometric composition and increased indium content. The band gap of the polycrystalline CuInTe2 film electrodeposited at 363 K at -660 mV was 0.98 eV. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：156 / 160

页数：5

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