Dramatic strain induced modification of the low field anisotropic magnetoresistance in ultrathin manganite films

被引：51

作者：

Egilmez, M. ^{[1
]}

Saber, M. M. ^{[1
]}

Mansour, A. I. ^{[1
]}

Ma, Rongchao ^{[1
]}

Chow, K. H. ^{[1
]}

Jung, J. ^{[1
]}

机构：

[1] Univ Alberta, Dept Phys, Edmonton, AB T6G 2G7, Canada

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期

基金：

加拿大自然科学与工程研究理事会;

关键词：

calcium compounds; enhanced magnetoresistance; lanthanum compounds; magnetic anisotropy; magnetic thin films; strontium compounds;

D O I：

10.1063/1.3021083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors investigated the anisotropic magnetoresistance (AMR) in ultrathin La-based manganite films grown on various substrates. It was found that depending on the strain state, the AMR in some of these systems exceeds 100% and can even change sign. These changes are very dramatic when compared to the few percent change in AMR in conventional ferromagnets. The mechanism behind these large changes in the AMR is discussed.

引用

页数：3