Fabrication of a double-sided silicon microstrip detector with an ONO capacitor dielectric film

被引：7

作者：

Saitoh, Y

Akamine, T

Inoue, M

Yamanaka, J

Kadoi, K

Takano, R

Kojima, Y

Miyahara, S

Kamiya, M

Ikeda, H

Matsuda, T

Tsuboyama, T

Ozaki, H

Tanaka, M

Iwasaki, H

Haba, J

Higashi, Y

Yamada, Y

Okuno, S

Avrillon, S

Nemoto, T

Fukunishi, I

Asano, Y

机构：

[1] KEK NAT LAB HIGH ENERGY PHYS,TSUKUBA,IBARAKI 305,JAPAN

[2] KANAGAWA UNIV,DEPT IND ENGN & MANAGEMENT,KANAGAWA,JAPAN

[3] UNIV TSUKUBA,INST APPL PHYS,TSUKUBA,IBARAKI 305,JAPAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.506649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Double-sided silicon microstrip detectors (DSSDs) with integrated coupling capacitors formed by an oxide-nitride-oxide (ONO) dielectric film were fabricated using newly developed processing techniques. We report on the processing techniques and some characteristics of the detectors fabricated in the above process.

引用

页码：1123 / 1129

页数：7

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