Study on the mechanism of aluminum nitride synthesis by chemical vapor deposition

被引：9

作者：

Li, CZ

Hu, LM

Yuan, WK

Chen, MH

机构：

[1] Inst. of Technical Chemical Physics, E. China Univ. of Sci. and Technol., Shanghai 200237

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1997年 / 47卷 / 2-3期

关键词：

aluminum nitride; chemical vapor deposition; process mechanisms; synthesis; ultrafine particles;

D O I：

10.1016/S0254-0584(97)80064-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultrafine aluminum nitride particles were synthesized by chemical vapor deposition at 973-1273 K. Effects of reaction temperature, gas total how rate, aluminum chloride concentration on aluminum nitride particle morphology and particle size distribution were studied. The mechanism of the reaction between aluminum chloride and ammonia and the mechanisms for homogeneous formation of aluminum nitride particles and growth of aluminum nitride film by surface reactions were investigated.

引用

页码：273 / 278

页数：6

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