The influence of B2O3 on the microstructure and microwave dielectric properties of the 0.45La(0.97)Sm(0.03)(Mg0.5Sn0.5)O-3-0.55Ca(0.8)Sm(0.4/3)TiO(3) ceramic system were investigated with a view to their application in microwave devices. A B2O3-doped 0.45La(0.97)Sm(0.03)(Mg0.5Sn0.5)O-3-0.55Ca(0.8)Sm(0.4/3)TiO(3) ceramic system was prepared using the conventional solid-state method. The X-ray diffraction patterns of the B2O3-doped 0.45La(0.97)Sm(0.03)(Mg0.5Sn0.5)O-3-0.55Ca(0.8)Sm(0.4/3)TiO(3) ceramic system did not significantly vary with sintering temperature. A dielectric constant of 35.5, a quality factor (Qxf) of 5,500 GHz, and a temperature coefficient of resonant frequency of -1 ppm/degrees C were obtained when the 2 wt% B2O3-doped 0.45La(0.97)Sm(0.03)(Mg0.5Sn0.5)O-3-0.55Ca(0.8)Sm(0.4/3)TiO(3) ceramic system was sintered at 1450 degrees C for 4 h.
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页码:67 / 76
页数:10
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Chen YC, 2012, INT J APPL CERAM TEC, V9, P606, DOI [10.1111/j.1744-7402.2011.02683, 10.1111/j.1744-7402.2011.02683.x]