High power operation of InGaAsP/InP multiquantum well DFB lasers at 1.55 mu m wavelength

被引：5
|
作者：
Chen, TR
Ungar, J
Iannelli, J
Oh, S
Luong, H
BarChaim, N
机构：
[1] Ortel Corp, Alhambra
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 10期
关键词：
distributed feedback lasers; semiconductor quantum wells; semiconductor junction lasers;
D O I：
10.1049/el:19960601
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
108 mW CW output power at room temperature has been realised in a strained multiquantum well InGaAsP/InP DFB laser al 1.55 mu m. The lasers also possess low threshold, current low intensity noise,and excellent high temperature behaviour with an output power of similar to 20 mW at 110 degrees C.
引用
收藏
页码：898 / 898
页数：1
相关论文
共 50 条
  • [31] 1.5-MU-M LAMBDA/4-SHIFTED INGAASP INP DFB LASERS
    AKIBA, S
    USAMI, M
    UTAKA, K
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (11) : 1564 - 1573
  • [32] Degradation of InGaAsP/InP-based multiquantum-well lasers
    Kallstenius, T
    Bäckström, J
    Smith, U
    Stoltz, B
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (05) : 2397 - 2406
  • [33] INGAASP INP-BCRW-DFB-LASER WITH A CONTACTED SURFACE GRATING FOR LAMBDA= 1.55 MU-M
    RAST, A
    ZACH, A
    AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1991, 45 (03): : 196 - 198
  • [34] BEYOND 20 GHZ BANDWIDTH OF PARTLY GAIN-COUPLED 1.55-MU-M STRAINED MULTIQUANTUM-WELL DFB LASERS
    LU, H
    MCGARRY, S
    LI, GP
    MAKINO, T
    ELECTRONICS LETTERS, 1993, 29 (15) : 1369 - 1370
  • [35] FABRICATION AND LASING CHARACTERISTICS OF 1.3-MU-M INGAASP MULTIQUANTUM-WELL LASERS
    SASAI, Y
    HASE, N
    OGURA, M
    KAJIWARA, T
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 28 - 31
  • [36] Optimized characteristics of 1.55 mu m MQW DFB lasers
    Han, SK
    Kang, JK
    Choi, BH
    Jeong, SJ
    Kim, TJ
    Jo, YR
    Sin, YK
    COMPOUND SEMICONDUCTORS 1995, 1996, 145 : 1037 - 1040
  • [37] TEMPERATURE RANGE FOR DFB MODE OSCILLATION IN 1. 5 mu m InGaAsP/InP DFB LASERS.
    Matsuoka, Takashi
    1600, (25):
  • [38] High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers
    Asryan, LV
    Gun'ko, NA
    Polkovnikov, AS
    Suris, RA
    Zegrya, GG
    Elenkrig, BB
    Smetona, S
    Simmons, JG
    Lau, PK
    Makino, T
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (12) : 1069 - 1075
  • [39] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION
    MATSUOKA, T
    NAGAI, H
    ITAYA, Y
    NOGUCHI, Y
    SUZUKI, Y
    IKEGAMI, T
    ELECTRONICS LETTERS, 1982, 18 (01) : 27 - 28
  • [40] ROOM-TEMPERATURE CW OPERATION OF INP-INGAASP-INP DOUBLE HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.55 MU-M
    KAWAGUCHI, H
    TAKAHEI, K
    TOYOSHIMA, Y
    NAGAI, H
    IWANE, G
    ELECTRONICS LETTERS, 1979, 15 (21) : 669 - 670
12345