High power operation of InGaAsP/InP multiquantum well DFB lasers at 1.55 mu m wavelength

被引：5
|
作者：
Chen, TR
Ungar, J
Iannelli, J
Oh, S
Luong, H
BarChaim, N
机构：
[1] Ortel Corp, Alhambra
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 10期
关键词：
distributed feedback lasers; semiconductor quantum wells; semiconductor junction lasers;
D O I：
10.1049/el:19960601
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
108 mW CW output power at room temperature has been realised in a strained multiquantum well InGaAsP/InP DFB laser al 1.55 mu m. The lasers also possess low threshold, current low intensity noise,and excellent high temperature behaviour with an output power of similar to 20 mW at 110 degrees C.
引用
收藏
页码：898 / 898
页数：1
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