Room-temperature remote-plasma sputtering of c-axis oriented zinc oxide thin films

被引：31

作者：

Garcia-Gancedo, L. ^{[1
]}

Pedros, J. ^{[2
]}

Zhu, Z. ^{[1
]}

Flewitt, A. J. ^{[1
]}

Milne, W. I. ^{[1
,3
]}

Luo, J. K. ^{[4
]}

Ford, C. J. B. ^{[2
]}

机构：

[1] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England

[2] Univ Cambridge, Cavendish Lab, Dept Phys, Cambridge CB3 0HE, England

[3] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

[4] Univ Bolton, IMRI, Bolton BL3 5AB, England

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

ZNO FILMS; DEPOSITION; ORIENTATION; SIZE; POLARITY;

D O I：

10.1063/1.4736541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly c-axis oriented ZnO films have been deposited at room temperature with high rates (similar to 50 nm.min(-1)) using an innovative remote plasma sputtering configuration, which allows independent control of the plasma density and the sputtering ion energy. The ZnO films deposited possess excellent crystallographic orientation, high resistivity (> 10(9) Omega.m), and exhibit very low surface roughness. The ability to increase the sputtering ion energy without causing unwanted Ar+ bombardment onto the substrate has been shown to be crucial for the growth of films with excellent c-axis orientation without the need of substrate heating. In addition, the elimination of the Ar+ bombardment has facilitated the growth of films with very low defect density and hence very low intrinsic stress (< 100 MPa for 3 mu m-thick films). This is over an order of magnitude lower than films grown with a standard magnetron sputtering system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4736541]

引用

页数：7

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