Electrical and microstructural analyses of 200 MeV Ag14+ ion irradiated Ni/GaN Schottky barrier diode

被引：30

作者：

Kumar, Ashish ^{[1
]}

Haehnel, A. ^{[2
]}

Kanjilal, D. ^{[3
]}

Singh, R. ^{[1
]}

机构：

[1] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[3] Inter Univ Accelerator Ctr, New Delhi 110067, India

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期

关键词：

GAN; DAMAGE;

D O I：

10.1063/1.4758929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ni/GaN Schottky barrier diodes were irradiated with 200 MeV Ag ions up to fluence of 1 x 10(11) ions/cm(2). The current-voltage measurements showed that the ideality factor, n, increased and the reverse leakage current, I-R, decreased with increase in fluence. But, Schottky barrier height increased only marginally with increase in fluence. Cross-sectional transmission electron microscopy images revealed the presence of defect clusters in bulk GaN after irradiation. However, the Ni/GaN interface did not show any intermixing or degradation after the irradiation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758929]

引用

页数：4

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