High efficiency and long lifetime OLED based on a metal-doped electron transport layer

被引：73
作者：
Lee, JH
Wu, MH
Chao, CC
Chen, HL
Leung, MK
机构：
[1] Natl Taiwan Univ, Grad Inst ElectroOpt Engn, Taipei 10764, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan
[3] Natl Taiwan Univ, Dept Chem, Taipei 10764, Taiwan
[4] Natl Taiwan Univ, Inst Polymer Sci & Engn, Taipei 10764, Taiwan
来源：
CHEMICAL PHYSICS LETTERS | 2005年 / 416卷 / 4-6期
关键词：
D O I：
10.1016/j.cplett.2005.09.104
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The OLED performance of cesium (Cs) doped 4,4'-bis(5-phenyl-[1,3,4]oxadiazol-2-yl)-2,2'-dinaphthylbiphenyl (bis-OXD), a metal-doped electron transport layer, is reported. Device lifetime increases because: (1) Cs is heavy and difficult to diffuse in an organic matrix, and (2) The host material, bis-OXD, exhibits a high glass-transition temperature (T.) of 147 degrees C. The average roughness of the thin film is small hence the leakage current of the corresponding OLED devices is low. By using a silver cathode, an OLED with a 2.59 V reduction in driving voltage, a 47.3% increase in current efficiency, and a 3.14 times enhancement in operation lifetime was demonstrated. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：234 / 237
页数：4
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