Linearity Considerations for Low-EVM, Millimeter-Wave Direct-Conversion Modulators

被引：30

作者：

Gupta, Arpit K. ^{[1
]}

Buckwalter, James F. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92037 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 10期

关键词：

Adjacent channel power ratio; digital pre-distortion (DPD); direct-conversion transmitter; error vector magnitude (EVM); I/Q modulator; Q-band; quadrature amplitude modulation (QAM); upconverter; IQ MODULATOR; CMOS; TRANSMITTER;

D O I：

10.1109/TMTT.2012.2209435

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the analysis and implementation of a millimeter-wave (mm-wave) I/Q modulator and determines the impact of I-and Q-channel nonlinearity, PA nonlinearity, and other nonideal circuit implementations on the error vector magnitude (EVM). The modulator is fabricated in 120-nm SiGe BiCMOS process and occupies an area of 5 mm(2). For a 64-QAM constellation at a 42-GHz carrier frequency, the EVM is less than 2.5% at 48-Mbps data rate. The on-chip digital-to-analog conversion resolution is capable of employing digital pre-distortion (DPD) and calibration. An external power amplifier is linearized to improve the EVM with DPD. To the best of the authors' knowledge, this is the lowest EVM reported at these mm-wave frequencies.

引用

页码：3272 / 3285

页数：14

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