High peak power pulses from dispersion optimised modelocked semiconductor laser

被引：26

作者：

Balzer, J. C. ^{[1
]}

Schlauch, T. ^{[1
]}

Klehr, A. ^{[2
]}

Erbert, G. ^{[2
]}

Traenkle, G. ^{[2
]}

Hofmann, M. R. ^{[1
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Photon & THz Technol, D-44780 Bochum, Germany

[2] Leibniz Inst Hochstfrequenztech Forschungsverbund, Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 13期

关键词：

D O I：

10.1049/el.2013.1447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presented is an electrically pumped passively modelocked edge-emitting semiconductor laser system in an external cavity setup with intracavity dispersion management. This concept, in combination with a pulse compressor, provides pulses as short as 158 fs. By expanding the setup with a tapered diode laser amplifier, peak powers up to 6.5 kW were achieved in the 850 nm wavelength range.

引用

页码：838 / 839

页数：2

共 10 条

[1] Fourier-transform external cavity lasers [J].

Breede, M ;

Hoffmann, S ;

Zimmermann, J ;

Struckmeier, J ;

Hofmann, M ;

Kleine-Ostmann, T ;

Knobloch, P ;

Koch, M ;

Meyn, JP ;

Matus, M ;

Koch, SW ;

Moloney, JV .

OPTICS COMMUNICATIONS, 2002, 207 (1-6) :261-271

[2] HIGH-POWER ULTRAFAST LASER-DIODES [J].

DELFYETT, PJ ;

FLOREZ, LT ;

STOFFEL, N ;

GMITTER, T ;

ANDREADAKIS, NC ;

SILBERBERG, Y ;

HERITAGE, JP ;

ALPHONSE, GA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2203-2219

[3] SHORT PULSE GENERATION USING MULTISEGMENT MODE-LOCKED SEMICONDUCTOR-LASERS [J].

DERICKSON, DJ ;

HELKEY, RJ ;

MAR, A ;

KARIN, JR ;

WASSERBAUER, JG ;

BOWERS, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2186-2202

[4] Ultrafast solid-state laser oscillators: a success story for the last 20 years with no end in sight [J].

Keller, U. .

APPLIED PHYSICS B-LASERS AND OPTICS, 2010, 100 (01) :15-28

[5] Direct generation of 20 W peak power picosecond optical pulses from an external-cavity mode-locked GaInN laser diode incorporating a flared waveguide [J].

Oki, Tomoyuki ;

Koda, Rintaro ;

Kono, Shunsuke ;

Miyajima, Takao ;

Watanabe, Hideki ;

Kuramoto, Masaru ;

Ikeda, Masao ;

Yokoyama, Hiroyuki .

APPLIED PHYSICS LETTERS, 2011, 99 (11)

[6] LINEWIDTH BROADENING FACTOR IN SEMICONDUCTOR-LASERS - AN OVERVIEW [J].

OSINSKI, M ;

BUUS, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (01) :9-29

[7] High power fiber lasers: current status and future perspectives [J].

Richardson, D. J. ;

Nilsson, J. ;

Clarkson, W. A. .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2010, 27 (11) :B63-B92

[8] High peak power femtosecond pulses from modelocked semiconductor laser in external cavity [J].

Schlauch, T. ;

Li, M. ;

Hofmann, M. R. ;

Klehr, A. ;

Erbert, G. ;

Traenkle, G. .

ELECTRONICS LETTERS, 2008, 44 (11) :678-U30

[9] Femtosecond passively modelocked diode laser with intracavity dispersion management [J].

Schlauch, Tobias ;

Balzer, Jan C. ;

Klehr, Andreas ;

Erbert, Goetz ;

Traenkle, Guenther ;

Hofmann, Martin R. .

OPTICS EXPRESS, 2010, 18 (23) :24316-24324

[10] Two-photon excitation fluorescence microscopy [J].

So, PTC ;

Dong, CY ;

Masters, BR ;

Berland, KM .

ANNUAL REVIEW OF BIOMEDICAL ENGINEERING, 2000, 2 :399-429

← 1 →