On-Chip Optical Interconnects Made with Gallium Nitride Nanowires

被引：77

作者：

Brubaker, Matt D. ^{[1
,2
]}

Blanchard, Paul T. ^{[1
]}

Schlager, John B. ^{[1
]}

Sanders, Aric W. ^{[1
]}

Roshko, Alexana ^{[1
]}

Duff, Shannon M. ^{[1
]}

Gray, Jason M. ^{[2
]}

Bright, Victor M. ^{[2
]}

Sanford, Norman A. ^{[1
]}

Bertness, Kris A. ^{[1
]}

机构：

[1] NIST, Phys Measurement Lab, Boulder, CO 80305 USA

[2] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA

来源：

NANO LETTERS | 2013年 / 13卷 / 02期

关键词：

Gallium nitride; light-emitting diodes; nanowires; photoconductivity; optical interconnects; DIODES;

D O I：

10.1021/nl303510h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this Letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising GaN nanowires with light-emitting and photoconductive capabilities. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy, transferred to a non-native substrate, and selectively contacted to form discrete optical source or detector nanowire components. The optical coupling demonstrated for this device may provide new opportunities for integration of optical interconnects between on-chip electrical subsystems.

引用

页码：374 / 377

页数：4

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