GaSb-based all-semiconductor mid-IR plasmonics

被引:4
作者
Taliercio, T. [1 ]
Guilengui, V. Ntsame [1 ]
Cerutti, L. [1 ]
Rodriguez, J. -B. [1 ]
Tournie, E. [1 ]
机构
[1] Univ Montpellier 2, CNRS INSIS UMR 5214, Inst Elect Sud, F-34095 Montpellier 05, France
来源
QUANTUM SENSING AND NANOPHOTONIC DEVICES X | 2013年 / 8631卷
关键词
plasmonics; surface plasmon; highly-doped semiconductors; antimonides; metamaterial; infrared; DOPED-SILICON; RESONANCES; TRANSMISSION; METAMATERIALS; RADIATION; OPTICS;
D O I
10.1117/12.2007903
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electrical and optical characterizations of highly-doped InAsSb layers lattice matched to GaSb substrates show the possibility to control their plasma frequency in the mid-infrared range. Reflectance experiments performed on InAsSb sub-wavelength arrays evidence localized surface plasmon resonances which can be modeled by finite difference time domain method. By adjusting the refractive index of the surrounding material and the geometry of the periodic arrays it is possible to control the frequency of the plasmonic resonances. Our results show that GaSb-based materials can be the building block of all-semiconductor mid-infrared plasmonic devices.
引用
收藏
页数:8
相关论文
共 43 条
[1]   Voltage-controlled active mid-infrared plasmonic devices [J].
Anglin, K. ;
Ribaudo, T. ;
Adams, D. C. ;
Qian, X. ;
Goodhue, W. D. ;
Dooley, S. ;
Shaner, E. A. ;
Wasserman, D. .
JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
[2]   Detection of deep-subwavelength dielectric layers at terahertz frequencies using semiconductor plasmonic resonators [J].
Berrier, Audrey ;
Albella, Pablo ;
Poyli, M. Ameen ;
Ulbricht, Ronald ;
Bonn, Mischa ;
Aizpurua, Javier ;
Rivas, Jaime Gomez .
OPTICS EXPRESS, 2012, 20 (05) :5052-5060
[3]   Ultrafast active control of localized surface plasmon resonances in silicon bowtie antennas [J].
Berrier, Audrey ;
Ulbricht, Ronald ;
Bonn, Mischa ;
Rivas, Jaime Gomez .
OPTICS EXPRESS, 2010, 18 (22) :23226-23235
[4]   Plasmon-enhanced mid-infrared luminescence from polar and lattice-structure-mismatched CdTe/PbTe single heterojunctions [J].
Cai, Chunfeng ;
Jin, Shuqiang ;
Wu, Huizhen ;
Zhang, Bingpo ;
Hu, Lian ;
McCann, P. J. .
APPLIED PHYSICS LETTERS, 2012, 100 (18)
[5]   Development of mid-infrared surface plasmon resonance-based sensors with highly-doped silicon for biomedical and chemical applications [J].
Chen, Yu-Bin .
OPTICS EXPRESS, 2009, 17 (05) :3130-3140
[6]   Tunable Mid-Infrared Localized Surface Plasmon Resonances in Silicon Nanowires [J].
Chou, Li-Wei ;
Shin, Naechul ;
Sivaram, Saujan V. ;
Filler, Michael A. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2012, 134 (39) :16155-16158
[7]   Infrared Surface Plasmon Resonance Biosensor [J].
Cleary, Justin W. ;
Medhi, Gautam ;
Peale, Robert E. ;
Buchwald, Walter R. ;
Edwards, Oliver ;
Oladeji, Isaiah .
ADVANCED ENVIRONMENTAL, CHEMICAL, AND BIOLOGICAL SENSING TECHNOLOGIES VII, 2010, 7673
[8]   Selective and non-selective wet-chemical etchants for GaSb-based materials [J].
Dier, O ;
Lin, C ;
Grau, M ;
Amann, MC .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (11) :1250-1253
[9]   Design analysis of doped-silicon surface plasmon resonance immunosensors in mid-infrared range [J].
DiPippo, William ;
Lee, Bong Jae ;
Park, Keunhan .
OPTICS EXPRESS, 2010, 18 (18) :19396-19406
[10]   Reversible Tunability of the Near-Infrared Valence Band Plasmon Resonance in Cu2-xSe Nanocrystals [J].
Dorfs, Dirk ;
Haertling, Thomas ;
Miszta, Karol ;
Bigall, Nadja C. ;
Kim, Mee Rahn ;
Genovese, Alessandro ;
Falqui, Andrea ;
Povia, Mauro ;
Manna, Liberato .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (29) :11175-11180