Low Resistivity Tin-Doped Copper Nanowires

被引：0

作者：

Lin, Ching-Yen ^{[1
]}

Wang, Chiu-Yen ^{[1
]}

Hung, Min-Hsiu ^{[1
]}

Liu, Tzu-Ling ^{[1
]}

Yew, Tri-Rung ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 04期

关键词：

Cu(Sn); chemical vapor deposition; electrical resistivity; interconnect; nanowire; Su-doped Cu nanowires; ELECTROMIGRATION; CU; GROWTH; WLR;

D O I：

10.1109/LED.2013.2246133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents Sn-doped Cu nanowires, Cu(Sn) NWs, synthesized by chemical vapor deposition using Cu and SnCl2 powders as precursors at low temperature (<= 400 degrees C) and their electrical properties. The Sn not only plays a role as a catalyst to enhance reduction of Cu, but also as a dopant for Cu(Sn) NWs. The Sn thickness, substrate pretreatment, substrate temperature, process pressure, and precursor compositions are optimized to obtain high-density nanowires. Results show that Cu(Sn) NWs, 30 mu m in length and 50-620 nm in diameter, are synthesized successfully at 350 degrees C. The Cu(Sn) NWs exhibit low resistivity (2.84 mu Omega-cm), which is the lowest value reported thus far, and a failure current density of 3.16 x 10(7) A/cm(2).

引用

页码：529 / 531

页数：3

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