Synthesis and characterization of thin films of Bi4Ti3O12 from oxide precursors

This work reports the synthesis and electrical characterization of thin films of Bi4Ti3O12 produced by an oxide-precursor method, The films were characterized using x-ray diffraction. At a temperature of 500-800 degrees C, Bi4Ti3O12 films were successfully crystallized on Si and Pt/Si substrates. Electrical and ferroelectric properties of Bi4Ti3O12 films were also obtained. The electrical properties reported include dielectric and capacitance-voltage (C-V) data. At a frequency of 100 kHz the measured dielectric constant and dissipation factor were 146 and 0.04, respectively, for films annealed at 700 degrees C for 2 h. C-V measurements of the Bi4Ti3O12 films in metal-ferroelectric-metal configuration confirmed that ferroelectric domain switching occurred. Ferroelectricity was confirmed by P-E hysteresis loops with remanent a polarization and coercive field of 1.6 mu C cm(-2) and 33.8 kV cm(-1), respectively.