SnS Thin Film Prepared by Pyrolytic Synthesis as an Efficient Counter Electrode in Quantum Dot Sensitized Solar Cells

被引:3
作者
Da, Xiaoyan [2 ,3 ]
Shi, Chengwu [1 ,2 ,3 ]
Zhang, Yanru [2 ,3 ]
Liu, Feng [3 ]
Fang, Xiaqin [3 ]
Zhu, Jun [3 ]
机构
[1] Hefei Univ Technol, Sch Chem Engn, Hefei 230009, Peoples R China
[2] Hefei Univ Technol, Sch Chem Engn, Hefei 230009, Peoples R China
[3] Chinese Acad Sci, Key Lab Novel Thin Film Solar Cells, Hefei 230031, Peoples R China
基金
中国国家自然科学基金;
关键词
SnS Thin Film; Pyrolytic Synthesis; Quantum Dot Sensitized Solar Cell; Counter Electrode; PHOTOVOLTAIC PERFORMANCE; OPTICAL-PROPERTIES; REDOX BEHAVIOR; DEPOSITION; PHOTOELECTRODE; FABRICATION; IODIDE;
D O I
10.1166/jnn.2015.10602
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The SnS thin films were successfully prepared by pyrolysis procedure for the counter electrodes in quantum dot sensitized solar cells (QDSCs) using the methanol solution containing stannous chloride dihydrate (0.40 mol . L-1) and thiourea (0.40 mol . L-1) as precursor solution at 300 degrees C in the air atmosphere. The electrochemical catalytic activity of the SnS thin films prepared by pyrolytic synthesis for the redox couple of S-x(2-)/S2- was investigated by electrochemical impedance spectroscopy. The result revealed that the charge transfer resistance of the as-prepared SnS thin film with the dipping-heating cycles of 5 was 106.4 Omega and the corresponded QDSCs gave a short circuit photocurrent density of 8.69 mA . cm(-2), open circuit voltage of 0.42 V, and fill factor of 0.43, yielding the photoelectric conversion efficiency of 1.57%, under the illumination of simulated AM 1.5 sunlight (100 mW.cm(-2)).
引用
收藏
页码:6813 / 6817
页数:5
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