Recent advances in the fabrication of graphene-ZnO heterojunctions for optoelectronic device applications

被引:100
作者
Liang, Feng-Xia [1 ,2 ]
Gao, Yang [3 ]
Xie, Chao [4 ]
Tong, Xiao-Wei [4 ]
Li, Zhong-Jun [4 ]
Luo, Lin-Bao [4 ]
机构
[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China
[2] Hefei Univ Technol, Anhui Prov Key Lab Adv Funct Mat & Devices, Hefei 230009, Anhui, Peoples R China
[3] Hefei Univ Technol, Inst Ind & Equipment Technol, Hefei 230009, Anhui, Peoples R China
[4] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China
基金
安徽省自然科学基金; 中国博士后科学基金; 中国国家自然科学基金;
关键词
SENSITIZED SOLAR-CELL; LIGHT-EMITTING-DIODES; ELECTRON-TRANSPORT LAYER; FILM SCHOTTKY JUNCTION; QUANTUM DOTS; IN-SITU; PHOTOVOLTAIC PERFORMANCE; ULTRASENSITIVE DETECTION; ENHANCED PHOTORESPONSE; LASING ENHANCEMENT;
D O I
10.1039/c8tc00172c
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric devices that combine graphene and ZnO have exhibited excellent device performances and attracted increasing research interest. However, although significant achievements have been made, many challenges still exist. In this review paper, we comprehensively summarize the recent advances in the fabrication of various graphene (also including reduced graphene oxide)-ZnO (e.g. ZnO films, nanowires, nanotubes, nanorods etc.) hybrid heterostructures, and their application in a number of optoelectronic devices, including photodiodes, phototransistors, solar cells, light emitting diodes (LEDs), lasers and so on. We start by briefly surveying the recent progress in the fabrication methodologies such as low-temperature and high-temperature methods. And then, we will elaborate on the optoelectronic device application in terms of device physics, performance analysis, and device optimization approaches. Finally, we close with some unresolved issues and challenges in this field.
引用
收藏
页码:3815 / 3833
页数:19
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