High intense violet luminescence in fluorine doped zinc oxide (FZO) thin films deposited by aerosol assisted CVD
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作者:
Anusha, Muthukumar
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Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
Grenoble INP, CNRS, Mat & Genie Phys Lab, F-38016 Grenoble, FranceAnna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
Anusha, Muthukumar
[1
,2
]
Arivuoli, Dakshnamoorthy
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Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, IndiaAnna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
Arivuoli, Dakshnamoorthy
[1
]
机构:
[1] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
[2] Grenoble INP, CNRS, Mat & Genie Phys Lab, F-38016 Grenoble, France
Fluorine doped nanocrystalline zinc oxide (F: ZnO-FZO) thin films with varying fluorine dopant level (0-5%) were prepared on corning glass substrates by aerosol assisted chemical vapor deposition. The films exhibited polycrystalline hexagonal wurtzite structure with preferred orientation along c-axis and crystallinity deteriorated with increasing fluorine. As prepared films were found to be stressed in the range from 1.2 to 1.7 GPa and the amount of stress depends strongly on growth conditions. Undoped ZnO films were in a state of less tensile stress, whereas in FZO, the tensile stress increases with the increasing F. Films exhibit hexagonal platelets morphology analyzed using Field emission scanning electron microscope (FESEM). UV-Vis-NIR transmission studies indicated a increase of energy bandgap and increase of optical transmission with the increase in fluorine. Urbach energy (E-U) of films have also been determined. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress due to defects introduced by fluorine. A special emphasis was devoted to E-2 high phonon mode analysis of Raman spectra. High intense violet PL has been achieved at room temperature and intensity improved vigorously with the dopant concentration due to a radiative transition of electrons from zinc vacancies level to the conduction band. (C) 2013 Elsevier B.V. All rights reserved.
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Indian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
Savitribai Phule Pune Univ, Dept Instrumentat Sci, Pune 411007, IndiaIndian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
Mandal, Animesh
Banpurkar, Arun G.
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Savitribai Phule Pune Univ, Dept Phys, Pune 411007, IndiaIndian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
Banpurkar, Arun G.
Shinde, Shashikant D.
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MESs Nowrosjee Wadia Coll, Dept Phys, Adv Funct Mat Lab, Pune 411001, IndiaIndian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
Shinde, Shashikant D.
Jejurikar, Suhas M.
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Univ Mumbai, Natl Ctr Nanosci & Nanotechnol, Mumbai, IndiaIndian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
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AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Anandhi, R.
Mohan, R.
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AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Mohan, R.
Swaminathan, K.
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RKM Vivekananda Coll Autonomous, Dept Phys, Madras 600004, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Swaminathan, K.
Ravichandran, K.
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AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
机构:
Indian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
Savitribai Phule Pune Univ, Dept Instrumentat Sci, Pune 411007, IndiaIndian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
Mandal, Animesh
Banpurkar, Arun G.
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Savitribai Phule Pune Univ, Dept Phys, Pune 411007, IndiaIndian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
Banpurkar, Arun G.
Shinde, Shashikant D.
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机构:
MESs Nowrosjee Wadia Coll, Dept Phys, Adv Funct Mat Lab, Pune 411001, IndiaIndian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
Shinde, Shashikant D.
Jejurikar, Suhas M.
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Univ Mumbai, Natl Ctr Nanosci & Nanotechnol, Mumbai, IndiaIndian Inst Sci IISc, Dept Mat Engn, Bangalore 560012, India
机构:
AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Anandhi, R.
Mohan, R.
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机构:
AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Mohan, R.
Swaminathan, K.
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RKM Vivekananda Coll Autonomous, Dept Phys, Madras 600004, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India
Swaminathan, K.
Ravichandran, K.
论文数: 0引用数: 0
h-index: 0
机构:
AVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, IndiaAVVM Sri Pushpam Coll Autonomous, PG & Res Dept Phys, Thanjavur 613503, Tamil Nadu, India