Alternative back contact designs for Cu(In,Ga)Se2 solar cells on polyimide foils

被引:14
作者
Bloesch, Patrick [1 ]
Nishiwaki, Shiro [1 ]
Jaeger, Timo [1 ]
Kranz, Lukas [1 ]
Pianezzi, Fabian [1 ]
Chirila, Adrian [1 ]
Reinhard, Patrick [1 ]
Buecheler, Stephan [1 ]
Tiwari, Ayodhya N. [1 ]
机构
[1] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, CH-8600 Dubendorf, Switzerland
关键词
CIGS; Alternative back contact; Flexible solar cell; Low cost material; DIFFUSION BARRIER LAYERS; FILMS; FAILURE; DEVICES;
D O I
10.1016/j.tsf.2012.11.091
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A multilayer Mo stack is conventionally used as the back contact for flexible Cu(In,Ga)Se-2 (CIGS) solar cells on polyimide foils, where record efficiencies of 18.7% were reported on lab-scale. The aim of this work was to develop alternative back contact designs on polyimide foils with the objective to reduce material costs, and to increase production throughput and yield. Two different back contact concepts are discussed, which are either based on Cu or Ti. The Cu-based back contact is a cost-effective design providing low sheet resistance of 0.2 Omega/square at similar to 200 nm stack thickness. To prevent Cu diffusion into the CIGS absorber, a TiN diffusion barrier was integrated into the back contact design. In addition, Cr was evaluated as a candidate of an alternative Cu-diffusion barrier material. Best cell efficiencies of 16.3% were achieved without antireflection coating on a Cu-based back contact design with a TiN diffusion barrier. For the Ti-based design, which is well adapted to the physical properties of the polyimide foil, efficiencies up to 18.1% were measured with antireflective coating. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:220 / 223
页数:4
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