Analysis of ultra short MOSFETs with high-k gate dielectrics

被引：0

作者：

Dragosits, K ^{[1
]}

Ponomarev, Y ^{[1
]}

Dachs, C ^{[1
]}

Selberherr, S ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Microelect, A-1040 Vienna, Austria

来源：

SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The introduction of alternative gate dielectrics into advanced CMOS devices has quite an impact on the device performance. In this work transient analyses of this type of devices are made for the first time. The analyses are made by mixed-mode simulation of a ring oscillator. It is shown that this method allows a deeper insight into the device properties than mere static analysis. Utilizing the results, first design rules for advanced CMOS devices are extracted.

引用

页码：412 / 415

页数：4

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