Straightforward measurement of anisotropic thermal properties of a Bi2Se3 single crystal

被引:14
作者
Fournier, D. [1 ]
Marangolo, M. [1 ]
Eddrief, M. [1 ]
Kolesnikov, N. N. [2 ]
Fretigny, C. [3 ]
机构
[1] Sorbonne Univ, CNRS, Inst NanoSci Paris, UMR 7588, F-75252 Paris, France
[2] Russian Acad Sci, ISSP, Chernogolovka, Moscow District, Russia
[3] Sorbonne Univ, PSI Univ, SIMM ESPCI Paris, CNRS,Lab Sci & Ingn Matiere Molle, F-75005 Paris, France
关键词
thermal conductivity; dichalcogenides; thermoreflectance; TRANSPORT-PROPERTIES; CONDUCTIVITY; DIFFUSIVITY; WAVES;
D O I
10.1088/1361-648X/aaad3c
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We demonstrate here a simple measurement protocol which allows the thermal properties of anisotropic crystalline materials to be determined. This protocol is validated by the measurement of Bi2Se3, a layered material consisting of covalently bonded sheets with weak van der Waals bonds between each layer, which has highly anisotropic thermal properties. Thermoreflectance microscopy measurements were carried out on a single-crystal Bi2Se3 sample, firstly on the bare sample and then after capping with a 100nm thick gold layer. Whereas on the bare sample lateral heat diffusion is dominated by the in-plane thermal diffusivity, on the metal-capped substrate heat diffusion perpendicular to the sample surface dominates. Using a simple theoretical model, we show how this double measurement protocol allows the anisotropic thermal conductivity coefficients of bulk Bi2Se3 to be evaluated.
引用
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页数:6
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