Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface

被引：8

作者：

Kawasaki, J. K. ^{[1
]}

Schultz, B. D. ^{[2
]}

Palmstrom, C. J. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 03期

关键词：

BEAM EPITAXY GROWTH; QUANTUM-WELLS; SEMIMETAL; ERBIUM; SEMICONDUCTORS; SUPERLATTICES; OXIDATION; SILICON; LAYERS; GAAS;

D O I：

10.1103/PhysRevB.87.035419

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of the electronic structure of ErSb nanoparticles embedded in GaSb(001) surfaces on particle size is investigated by in situ scanning tunneling microscopy and spectroscopy. By varying growth conditions, the planar dimensions and surface termination of ErSb nanoparticles can be controlled. As the deposition temperature is raised, ErSb nanoparticles become increasingly elongated along the <-110 > directions due to anisotropic surface diffusion. The local density of states is measured by tunneling point spectroscopy. ErSb nanoparticles were found to be semimetallic with no discernible band gap, despite predictions from finite potential quantum confinement calculations that suggest the smallest particles should become semiconducting. DOI: 10.1103/PhysRevB.87.035419

引用

页数：5

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