N incorporation in GaInNSb alloys and lattice matching to GaSb

被引：18

作者：

Ashwin, M. J. ^{[1
]}

Walker, D. ^{[2
]}

Thomas, P. A. ^{[2
]}

Jones, T. S. ^{[1
]}

Veal, T. D. ^{[3
]}

机构：

[1] Univ Warwick, Dept Chem, Coventry CV4 7AL, W Midlands, England

[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[3] Univ Liverpool, Sch Phys Sci, Stephenson Inst Renewable Energy, Liverpool L69 4ZF, Merseyside, England

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

THERMODYNAMIC ANALYSIS; GROWTH; NITROGEN; GAAS; GANSB;

D O I：

10.1063/1.4775745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of N into MBE grown GaNSb and GaInNSb is investigated. Measurements of the N fraction in GaNSb show the familiar linear dependence on inverse growth rate, followed by a departure from this at low growth rates; a similar behaviour is observed for GaInNSb. Unexpectedly, the point at which there is a departure from this linear behaviour is found to be extended to lower growth rates by the addition of small amounts of In. These results are compared to a kinetic theory-based model from which it is postulated that the change in behaviour can be attributed to an In-induced change in the characteristic surface residence lifetime of the N atoms. In addition, a method is demonstrated for growing GaInNSb lattice-matched to GaSb(001) for compositions with band gaps covering the 2-5 mu m region. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775745]

引用

页数：5

共 25 条

[1] Controlled nitrogen incorporation in GaNSb alloys [J].

Ashwin, M. J. ;

Veal, T. D. ;

Bomphrey, J. J. ;

Dunn, I. R. ;

Walker, D. ;

Thomas, P. A. ;

Jones, T. S. .

AIP ADVANCES, 2011, 1 (03)

[2] Growth of dilute GaNSb by plasma-assisted MBE [J].

Buckle, L ;

Bennett, BR ;

Jollands, S ;

Veal, TD ;

Wilson, NR ;

Murdin, BN ;

McConville, CF ;

Ashley, T .

JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :188-192

[3]

Buyanova I., 2004, Physics and applications of dilute nitrides

[4] Comparison of nitrogen compositions in the as-grown GaNxAs1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopy [J].

Fan, WJ ;

Yoon, SF ;

Ng, TK ;

Wang, SZ ;

Loke, WK ;

Liu, R ;

Wee, A .

APPLIED PHYSICS LETTERS, 2002, 80 (22) :4136-4138

[5] Nonlinear dependence of N incorporation on In content in GaInNAs [J].

Friedman, DJ ;

Geisz, JF ;

Kurtz, SR ;

Olson, JM ;

Reedy, R .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :438-443

[6] Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN [J].

Harmand, JC ;

Ungaro, G ;

Largeau, L ;

Le Roux, G .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2482-2484

[7]

Henini M., 2005, DILUTE NITRIDE SEMIC

[8] Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb [J].

Jefferson, P. H. ;

Buckle, L. ;

Bennett, B. R. ;

Veal, T. D. ;

Walker, D. ;

Wilson, N. R. ;

Piper, L. F. J. ;

Thomas, P. A. ;

Ashley, T. ;

McConville, C. F. .

JOURNAL OF CRYSTAL GROWTH, 2007, 304 (02) :338-341

[9] Band anticrossing in GaNxSb1-x [J].

Jefferson, P. H. ;

Veal, T. D. ;

Piper, L. F. J. ;

Bennett, B. R. ;

McConville, C. F. ;

Murdin, B. N. ;

Buckle, L. ;

Smith, G. W. ;

Ashley, T. .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[10] Growth and characterisation of high quality MBE grown InNxSb1-x [J].

Jefferson, P. H. ;

Buckle, L. ;

Walker, D. ;

Veal, T. D. ;

Coomber, S. ;

Thomas, P. A. ;

Ashley, T. ;

McConville, C. F. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (03) :104-106

← 1 2 3 →