Improved transformer design for high frequency VRM applications

被引:8
作者
Reusch, David [1 ]
Lee, Fred C. [1 ]
Xu, Ming [1 ]
Sterk, Doug [1 ]
机构
[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
来源
APEC 2008: TWENTY-THIRD ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-4 | 2008年
关键词
self-driven; high frequency transformer design; integrated Magnetics; VRM;
D O I
10.1109/APEC.2008.4522920
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The desire for higher frequencies in VRM designs to reduce the size and number of passive components resulted in soft switching topologies that reduced the gate driving loss and body diode conduction loss at high frequencies. Many of these high frequency soft switching designs use step down transformers to reduce the circulating energy in the primary side components. The transformer design for these topologies is integral to their success do to its relation to ZVS conditions and body diode conduction losses. The magnetic improvements proposed reduce the leakage inductance of integrated transformers, the number of magnetic components required, and increase the overall efficiency of the design. The topology used in this work was the 1MHz self-driven DC-DC converter for non-isolated 12V VRM.
引用
收藏
页码:1483 / 1489
页数:7
相关论文
共 7 条
[1]  
*ANS CORP, MAXW 3D FIELD SIM
[2]  
SABATE JA, 1990, APPL POWER ELECT CO, P275, DOI 10.1109/APEC.1990.66420
[3]  
Schmitz N.L., 1965, INTRO ELECTROMECHANI
[4]  
WANG S, 2003, THESIS VIRGINIA TECH
[5]   1-MHz self-driven ZVS full-bridge converter for 48-V power pod and DC/DC brick [J].
Xu, M ;
Ren, YC ;
Zhou, JH ;
Lee, FC .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2005, 20 (05) :997-1006
[6]  
ZHOU J, 2004, APPL POW EL C APEC, V1, P279
[7]  
NATIONWIDE CIRCUITS