Electronic, optical and transport properties of α-, β- and γ-phases of spinel indium sulphide: An ab initio study

被引:35
作者
Sharma, Yamini [1 ]
Srivastava, Pankaj [1 ]
机构
[1] Feroze Gandhi Postgrad Coll, Dept Phys, Rae Bareli 229001, UP, India
关键词
Chalcogenides; Semiconductors; ab initio calculations; Band structure; Optical properties; Thermal properties; THIN-FILMS; BETA-IN2S3; CDIN2S4; IN2S3;
D O I
10.1016/j.matchemphys.2012.04.064
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spinel indium sulphide exists in three phases. The tetragonal beta-phase transforms to the cubic alpha-phase at 420 degrees C which further transforms to the trigonal gamma-phase at 754 degrees C. Due to wide energy bandgap, the phases of indium sulphide have possibilities of applications in photo-electrochemical solar cell devices as a replacement of toxic CdS. The electronic, optical and transport properties of the three phases have therefore been investigated using full potential linear augmented plane wave (FP-LAPW) + local orbitals (lo) scheme, in the framework of density functional theory (DFT) with generalized gradient approximation (GGA) for the purpose of exchange-correlation energy functional. We present the structure, energy bands and density of states (DOS) for alpha-, beta- and gamma-phases. The partial density of states (PDOS) of beta-In2S3 is in good agreement with experiment and earlier ab initio calculations. To obtain the fundamental characteristics of these phases we have analysed their linear optical properties such as the dynamic dielectric function in the energy range of 0-15 eV. From the dynamic dielectric function it is seen that there is no directional anisotropy for alpha-phase since the longitudinal and transverse components are almost identical, however the beta and gamma-phases show birefringence. The optical absorption profiles clearly indicate that beta-phase has possibility of greater multiple direct and indirect interband transitions in the visible regions compared to the other phases. To study the existence of interesting thermoelectric properties, transport properties like electrical and thermal conductivities, Seebeck and Hall coefficients etc. are also calculated. Good agreements are found with the available experimental results. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:385 / 394
页数:10
相关论文
共 28 条
[1]   Perturbed angular correlation study of the thiospinel β-In2S3 [J].
Aldon, L ;
Uhrmacher, M ;
Branci, C ;
Ziegeler, L ;
Roth, J ;
Schaaf, P ;
Metzner, H ;
Olivier-Fourcade, J ;
Jumas, JC .
PHYSICAL REVIEW B, 1998, 58 (17) :11303-11312
[2]   Linear optical properties of solids within the full-potential linearized augmented planewave method [J].
Ambrosch-Draxl, Claudia ;
Sofo, Jorge O. .
COMPUTER PHYSICS COMMUNICATIONS, 2006, 175 (01) :1-14
[3]   Bandgap properties of the indium sulfide thin-films grown by co-evaporation [J].
Barreau, N. ;
Mokrani, A. ;
Couzinie-Devy, F. ;
Kessler, J. .
THIN SOLID FILMS, 2009, 517 (07) :2316-2319
[4]  
Bessergenev VG, 1996, INORG MATER+, V32, P592
[5]  
Blaha P., 2001, WIEN2K
[6]   Structural and optical properties of in2S3 thin films prepared by flash evaporation [J].
Bouabid, K. ;
Ihlal, A. ;
Outzourhit, A. ;
Ameziane, E.L. .
Active and Passive Electronic Components, 2004, 27 (04) :207-214
[7]   PHOTOCONDUCTIVITY IN INDIUM SULFIDE POWDERS AND CRYSTALS [J].
BUBE, RH ;
MCCARROLL, WH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (04) :333-335
[8]   VAPOR AND FLUX GROWTH OF GAMMA-IN2S3, A NEW MODIFICATION OF INDIUM SESQUISULFIDE [J].
DIEHL, R ;
NITSCHE, R .
JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) :38-46
[9]   THE EFG AT REGULAR LATTICE SITES IN INX-COMPOUNDS AND PHASE-TRANSITIONS IN IN2S3-SEMICONDUCTORS, IN2SE3-SEMICONDUCTORS, IN2TE3-SEMICONDUCTORS [J].
FRANK, M ;
GUBITZ, F ;
KREISCHE, W ;
LABAHN, A ;
OTT, C ;
ROSELER, B ;
SCHWAB, F ;
WEESKE, G .
HYPERFINE INTERACTIONS, 1987, 34 (1-4) :265-269
[10]   Micrometre-sized In2S3half-shells by a new dynamic soft template route:: properties and applications [J].
Gao, P ;
Xie, Y ;
Chen, SW ;
Zhou, MZ .
NANOTECHNOLOGY, 2006, 17 (01) :320-324